一、个人简介
金敏，男，1982年6月生，博士，教授，2021年入选上海市曙光学者。长期从事先进材料研究及产业化，在Science、ACS Energy Lett.、Nano Energy、Chem. Eng. J.、Chem.Mater.、ACS Appl. Mater. Inter.等期刊上发表论文100余篇，申请专利20余项，出版专著一部。主持或参与科研项目20余项，包括国家自然科学基金面上项目、国家自然科学基金青年项目、中科院重大知识创新项目、上海市自然科学基金、上海科委科研计划项目、江苏省创新创业项目、浙江省自然科学基金等。曾获中华人民共和国教育部科技成果完成者证书，第一、二届人工晶体青年学术会议优秀青年学者及中国石油和化学工业优秀出版物二等奖。
二、主要学习与工作经历
1999-2003：中国地质大学，学士
2003-2008：中科院上海硅酸盐研究所，硕博连读
2008-2015：上海应用技术大学，讲师、副教授
2015-2016：昆山鼎晶镓业晶体材料有限公司，技术总监
2016-2018：中科院宁波材料所，教授级高工
2018.10-至今：bwin必赢登录入口，教授
三、代表性科研成果
（1）代表性学术成果：在Science (2020, 369: 542-545)期刊发表重要论文，报道发现一种InSe半导体晶体具有超塑性力学特征，为柔性电子研究与应用开辟了一条新途径。该工作入选2020年上海市科技进步报告“基础研究成果国际影响力显著提升”板块，并进一步被选为当年全市42篇Science成果中的唯一代表作。
（2）代表性应用成果：突破国外技术垄断，自主开发了一种多坩埚下降
法技术生长GaAs半导体晶体，实现了国产化。该工作从基础研究走向商业化，产品批量出口日韩市场，受到客户肯定。相关技术经中科院上海科技查新中心检索，认为处于国际先进水平。该工作的重要意义不仅在于开发了具有自主知识产权的GaAs晶体生长技术，更重要的是建立了一套成熟的半导体晶体研发体系，为将来其他半导体晶体研究奠定了扎实的科学技术基础。
（3）近年来发表的论文：
(1)Tianran Wei,Min Jin, Yuecun Wang, et.al. Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe. Science.2020, 369, 542-545.
(2)Min Jin, Siqi Lin, Wen Li, Xinyue Zhang, Yanzhong Pei. Nearly isotropic transport properties in anisotropically structured ntype single-crystalline Mg3Sb2. Materials Today Physics. 2021, 21, 100508.
(3)JIN Min,BAI Xudong, ZHANG Rulin, ZHOU Lina, LI Rongbin. Metal Sulfide Ag2S: Fabrication via Zone Melting Method and Its Thermoelectric Property. Journal of Inorganic Materials.2022, 37(1): 101-106.
(4)Min Jin, XiaoLei Shi, Tianli Feng, et al., Super Large Sn1-xSe Single Crystals with Excellent Thermoelectric Performance. ACS Applied Materials & Interfaces. 2019, 11: 8051-8059.
(5)Chaopeng Zhao, Weishan Yan, Suqin Han, Wangyang Zhang, Min Jin, Duo Liu，Mechanically accessible band engineering via indentation-induced phase transition on two-dimensional layered β-InSe.Applied Surface Science.2022,604:154573.
(6)Hongli Zhang, Min Jin, Hui Shen, and Jiayue Xu. Influence of Si Doping on Dislocations and Mechanical Properties of GaAs Crystals Grown by Modified Vertical Bridgman Method. Cryst. Res. Technol.2022, 2100247.
(7)Min Jin, Feng He, Shuying Zheng, Yadong Xu, Yan Peng, Xiufei Chen, and Xiangang Xu. Growth of ZnTe Semiconductor Crystal Via a Te Flux Zone Melting Method and Characterization of Its properties. Cryst. Res. Technol. 2022, 2100279.
(8)Fengrui Sui, Min Jin, Yuanyuan Zhang, Jin Hong, et al. Atomic insights into the influence of Bi doping on the optical properties of two-dimensional van der Waals layered InSe. J. Phys.: Condens. Matter. 2022, 34: 224006.
(9)Min Jin, Jiasheng Liang, Pengfei Qiu, Hui Huang, Zhongmou Yue, Lina Zhou, Rongbin Li,Lidong Chen, and Xun Shi. Investigation on Low-Temperature Thermoelectric Properties ofAg2Se Polycrystal Fabricated by Using Zone-Melting Method. The Journal of Physical Chemistry Letters. 2021, 12, 8246-8255.
(10)Min Jin, Liangtao Zheng, Cheng Sun, et al. Manipulation of hole and band for thermoelectric enhancements in SrCd2Sb2Zintl compound. Chemical Engineering Journal, 2021, 420,130530.
(11)Min Jin, Xudong Bai, Ziqi Tang, et al. Fabrication of InSb crystal via Horizontal Bridgman method and investigation on its thermoelectric properties. Materials Research Bulletin, 2021, 142: 111411.
(12)Min Jin, Wenhui Yang, Xianghu Wang, et al. Growth and characterization of ZnTe
single crystal via a novel Te flux vertical Bridgman method. Rare Met.2021, 40(4):858-864.
(13)Min Jin, Xudong Bai, Wenhui Yang, et al. Growth of ZnTe crystal via directional solidification method and study of its mechanical properties. J Mater Sci, 2021, 56:6306-6314.
(14)Cheng Qin, Min Jin, Rulin Zhang, et al.Preparation and thermoelectric properties of ZnTe-doped Bi0.5Sb1.5Te3 single crystal, Materials Letters,2021, 292, 129619.
(15)Min Jin, Xudong Bai, Su Zhao, et al.Mechanical Property of SnSe Single Crystal Prepared via Vertical Bridgman Method. Journal of Inorganic Materials. 2021,36(3), 313-318.
(16)Min Jin, Ziqi Tang, Rulin Zhang, et al., Growth of large size SnSe crystal via directional solidification and evaluation of its properties, Journal of Alloys and Compounds. 2020, 824: 153869.
(17)Min Jin, Ziqi Tang, Rulin Zhang, et al.,Growth of SnSecrystal via vapor deposition method and characterization of its properties. Materials Research Bulletin, 2020, 126:110819.
(18)Min Jin, Ziqi Tang, Rulin Zhang, et al., Growth of GaSb Crystal and Evaluation of Its Thermoelectric Properties Along (111) Plane. Crystal Research Technology. 2019, 1900156.
(19)Min Jin, Siqi Lin, Wen Li, et al., Fabrication and thermoelectric properties of single crystal argyrodite Ag8SnSe6. Chemistry of Materials. 2019, 31(7): 2603-2610.
(20)Min Jin, Jun Jiang, Rongbin Li, et al., Growth of large size SnSe single crystaland comparison of its thermoelectric property with polycrystal,Materials Research Bulletin. 2019, 114: 156-160.
(21)Min Jin, Jun Jiang, Rongbin Li, et al., Thermoelectric Properties of Pure SnSe Single Crystal Prepared by a Vapor Deposition Method. Crystal Research Technology. 2019, 1900032.
(22)Min Jin,Zhiwei Chen, Xiaojian Tan, Hezhu Shao, Guoqiang Liu, Haoyang Hu, Jingtao Xu, Bo Yu, Hui Shen, et al. Charge transport in thermoelectric SnSe single crystals,ACS Energy Letters, 2018, 3, 689-694.
(23)Jiayue Xu, Xiaoxiao Liang, Min Jin. Growth and characterization of all-inorganic perovskite CsPbBr3 crystal by a traveling zone melting method.Journal of Inorganic Materials,2018, 11(33),1253-1258
(24)HezhuShao, Min Jin, Hao Zhang, Haochuan Jiang,et al. First-principles study of manipulating the phonon transport of Molybdenum disulfide by Na-intercalating, Journal of Physical Chemistry C,2018, 122, 2632-2640.
(25)Min Jin, Hezhu Shao, Haoyang Hu, Debo Li, et al. Growth and characterization of large size undoped p-type SnSe single crystal by Horizontal Bridgman method, Journal of Alloys and Compounds,2017, 712: 857-862.
(26)Min Jin, Hezhu Shao, Haoyang Hu, Jiayue Xu, Jun Jiang, Single crystal growth of Sn0.97Ag0.03Se by a novel horizontal Bridgman method and its thermoelectric properties, Journal of Crystal Growth, 2017, 460: 112-116.
(27)Min Jin, Hui Shen, Shiji Fan, Qingbo He, Jiayue Xu. Industrial growth and characterization of Si-doped GaAs crystal by a novel multi-crucible Bridgman method, Crystal research and technology, 2017, 1700052.
四、主要社会学术团体兼职
《人工晶体学报》、《应用技术学报》及《上海电机学报》等期刊编委。
五、主要研究方向
晶体生长与表征，半导体材料开发及应用。
六、在研项目
(1)Ag基硫银锗矿晶体结构稳定性调控及热电性能优化研究，国家自然科学基金面上项目，54万，主持。
(2)快离子类导体晶体生长及热电性能研究，上海市教委曙光计划项目，15万，主持。
(3)Ag基快离子晶体银离子析出行为及热电稳定性优化研究，上海市自然科学基金，20万，主持。
(4)超柔性InSe晶体生长及热电/力学性能协同调控研究，晶体材料国家重点实验室开放课题，10万，主持。
(5)先进无机半导体热电转换材料的开发与应用，乌镇实验室PI团队建设项目(柔性)，600万，参与。
七、联系方式
Email:jinm@sdju.edu.cn